Band gap engineering in huge-gap semiconductor SrZrO₃ for visible-light photocatalysis

Using SrZrO₃ (SZO, the intrinsic band gap being 5.6 eV) as an example, we have investigated the design principles for huge-gap semiconductors with band gap larger than 5 eV for the application of efficient visible-light driven photocatalysts for splitting water into hydrogen. Based on the hybrid density function calculations, the electronic structures of mono-doped and co-doped SZO are investigated to obtain design principles for improving their photocatalytic activity in hydrogen generation. The cationic-anionic co-doping in SZO could reduce the band gap significantly and its electronic band position is excellent for the visible-light photocatalysis. This work reports a new type of candidate material for visible-light driven photocatalysis, i.e., huge-gap semiconductors with band gap larger than 5 eV. Furthermore, based on the present results we have proposed the design principles for band gap engineering that provides general guideline for other huge-gap semiconductors.