Backward rectifying and forward Schottky behavior at Au/Nb-1.0 wt % -doped SrTiO₃ interface

The AuNb-1.0 wt % -doped SrTi O3 junctions were successfully fabricated by magnetic controlled sputtering and annealing process. Backward diodelike behaviors were observed in as-prepared junction and the one annealed at 350 °C. Transition to Schottky behavior was found in the junction annealed at 750 °C; the Schottky junction shows linear capacitance-voltage (C-2 -V) relationship in the reverse condition with barrier heights determined to be 1.6 eV. The results of current-voltage (I-V) measurements reveal that high temperature annealing can alter interface barrier and thereby ameliorate the stability of leakage current remarkably.