Au-Si eutectic wafer bonding mechanism analysis and a intensity model

X. Wang; D. Zhang; J. Li; Z. You; B. Cai

doi:10.4028/3-908451-30-2.575

Au-Si eutectic wafer bonding mechanism analysis and a intensity model

X. Wang^*
, D. Zhang
, J. Li
, Z. You
, B. Cai

^*Corresponding author for this work

School of Electronic and Information Engineering

Peking University
Beihang University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.

Original language	English
Title of host publication	Nanoscience and Technology
Publisher	Trans Tech Publications Ltd
Pages	575-578
Number of pages	4
Edition	PART 1
ISBN (Print)	3908451302, 9783908451303
DOIs	https://doi.org/10.4028/3-908451-30-2.575
State	Published - 2007
Event	China International Conference on Nanoscience and Technology, ChinaNANO 2005 - Beijing, China Duration: 9 Jun 2005 → 11 Jun 2005

Publication series

Name	Solid State Phenomena
Number	PART 1
Volume	121-123
ISSN (Print)	1012-0394

Conference

Conference	China International Conference on Nanoscience and Technology, ChinaNANO 2005
Country/Territory	China
City	Beijing
Period	9/06/05 → 11/06/05

Keywords

Au-Si
Eutectic bonding
Strength test
Wafer

Access to Document

10.4028/3-908451-30-2.575

Cite this

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title = "Au-Si eutectic wafer bonding mechanism analysis and a intensity model",

abstract = "Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.",

keywords = "Au-Si, Eutectic bonding, Strength test, Wafer",

author = "X. Wang and D. Zhang and J. Li and Z. You and B. Cai",

year = "2007",

doi = "10.4028/3-908451-30-2.575",

language = "英语",

isbn = "3908451302",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

number = "PART 1",

pages = "575--578",

booktitle = "Nanoscience and Technology",

address = "瑞士",

edition = "PART 1",

note = "China International Conference on Nanoscience and Technology, ChinaNANO 2005 ; Conference date: 09-06-2005 Through 11-06-2005",

}

Wang, X, Zhang, D, Li, J, You, Z & Cai, B 2007, Au-Si eutectic wafer bonding mechanism analysis and a intensity model. in Nanoscience and Technology. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 121-123, Trans Tech Publications Ltd, pp. 575-578, China International Conference on Nanoscience and Technology, ChinaNANO 2005, Beijing, China, 9/06/05. https://doi.org/10.4028/3-908451-30-2.575

TY - GEN

T1 - Au-Si eutectic wafer bonding mechanism analysis and a intensity model

AU - Wang, X.

AU - Zhang, D.

AU - Li, J.

AU - You, Z.

AU - Cai, B.

PY - 2007

Y1 - 2007

N2 - Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.

AB - Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.

KW - Au-Si

KW - Eutectic bonding

KW - Strength test

KW - Wafer

UR - https://www.scopus.com/pages/publications/38549170547

U2 - 10.4028/3-908451-30-2.575

DO - 10.4028/3-908451-30-2.575

M3 - 会议稿件

AN - SCOPUS:38549170547

SN - 3908451302

SN - 9783908451303

T3 - Solid State Phenomena

SP - 575

EP - 578

BT - Nanoscience and Technology

PB - Trans Tech Publications Ltd

T2 - China International Conference on Nanoscience and Technology, ChinaNANO 2005

Y2 - 9 June 2005 through 11 June 2005

ER -

Au-Si eutectic wafer bonding mechanism analysis and a intensity model

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Keywords

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