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Atomistic simulations of the interactions between the 1/2 〈1 1 1〉 {1 1 0} edge dislocations and the intrinsic point defects in tungsten

  • Bingchen Li
  • , Shuo Jin*
  • , Ke Xu
  • , Jiannan Hao
  • , Xiaolin Shu
  • *Corresponding author for this work
  • Beihang University

Research output: Contribution to journalArticlepeer-review

Abstract

Atomistic simulations were employed to investigate the stress field spatial distributions, strain energy of the 1/2 〈1 1 1〉 {1 1 0} edge dislocation, and the binding energies between the edge dislocation and the point defects in tungsten, based on two different embedded-atom method (EAM) potentials. The basic static properties are consistent with the elastic theory of dislocations for these two potentials. Comparatively speaking, the map of the binding energy between the edge dislocation and the monovacancy illustrates that the results based on the Marinica's potential fits better with the elastic theory. In addition, we obtained the radii of absorption between the point defects and the edge dislocation in the slip plane (the maximum value is 19 Å for the monovacancy, while 34 Å for the self-interstitial atom (SIA)) at 0 K. By calculating the binding energy and the interaction radii, we found the intensity of the interaction between the SIA and the edge dislocation is stronger than that of the vacancy and the edge dislocation.

Original languageEnglish
Pages (from-to)59-63
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume459
DOIs
StatePublished - 15 Nov 2019

Keywords

  • Atomistic simulation
  • Edge dislocation
  • Monovacancy
  • SIA

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