Abstract
Interfacial engineering in oxide heterostructures has evolved into a thriving research field due to the presence of diverse novel physical phenomena. In this study, we grew epitaxial CuO thin films on a ZnO(0001) single crystal substrate, where the orientation relationship was CuO [110] (11̅1̅) || ZnO [112̅0] (0001). The atomic, magnetic, and electronic structures of the CuO/ZnO interface and the CuO(001) twin boundary were studied by combining aberration-corrected scanning transmission electron microscopy and first-principles calculations. The CuO/ZnO interface was found to be fully coherent and metallic, making it possible to form two-dimensional electron gas between the two semiconductors.
| Original language | English |
|---|---|
| Article number | 105022 |
| Journal | Materials Today Communications |
| Volume | 33 |
| DOIs | |
| State | Published - Dec 2022 |
| Externally published | Yes |
Keywords
- Copper oxide
- First-principles calculations
- Interface
- Scanning transmission electron microscopy
- Twin boundary
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