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Application of moiré method for defect detection and strain imaging of silicon single crystals

  • Beihang University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Defect detection is crucial to the manufacture and evaluation of materials. However, it is still a great challenge to detect the defects in a wide field. In this paper, the two-dimensional (2D) digital multiplication moiré method is presented. The point defects of the crystal are detected visually by employing digital image processing. We mainly discuss the applications of this method to detect the defect and measure the strain in the silicon (Si) single crystals. The strain distributions in the main directions of Si single crystals are measured, and the point defects are detected. Point defects are easier to observe when the atomic structure is amplified using 2D multiplication moiré. The 2D multiplication moiré method that has been used for the point defects detection in Si single crystals described in this paper also lays an important foundation for the detection of strains and defects in the crystal structure of other materials.

Original languageEnglish
Title of host publicationInternational Conference on Optical and Photonic Engineering, icOPEN 2023
EditorsHaixia Wang, Fang Cheng, Cuong Dang, Aaron Danner, Qian Kemao
PublisherSPIE
ISBN (Electronic)9781510674561
DOIs
StatePublished - 2024
Event2023 International Conference on Optical and Photonic Engineering, icOPEN 2023 - Singapore, Singapore
Duration: 27 Nov 20231 Dec 2023

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume13069
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference2023 International Conference on Optical and Photonic Engineering, icOPEN 2023
Country/TerritorySingapore
CitySingapore
Period27/11/231/12/23

Keywords

  • Multiplication moiré method
  • Si single crystals
  • defect detection
  • sampling moiré method
  • strain imaging

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