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Antiferromagnetic topological insulator MnBi2Te4: Synthesis and magnetic properties

  • Hao Li
  • , Shengsheng Liu
  • , Chang Liu
  • , Jinsong Zhang
  • , Yong Xu
  • , Rong Yu
  • , Yang Wu
  • , Yuegang Zhang*
  • , Shoushan Fan
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Recently, MnBi2Te4 has been discovered as the first intrinsic antiferromagnetic topological insulator (AFM TI), and it will become a promising material to discover exotic topological quantum phenomena. In this work, we have realized the successful synthesis of high-quality MnBi2Te4 single crystals by solid-state reactions. The as-grown MnBi2Te4 single crystal exhibits a van der Waals layered structure, which is composed of septuple Te-Bi-Te-Mn-Te-Bi-Te sequences as determined by X-ray diffraction and high-resolution high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The magnetic order below 25 K as a consequence of A-type antiferromagnetic interaction between Mn layers in the MnBi2Te4 crystal suggests the unique interplay between antiferromagnetism and topological quantum states. Moreover, the transport measurements of MnBi2Te4 single crystals further confirm its magnetic transition. This study on the first AFM TI of MnBi2Te4 will guide the future research on other potential candidates in the MBixTey family (M = Ni, V, Ti, etc.).

Original languageEnglish
Pages (from-to)556-563
Number of pages8
JournalPhysical Chemistry Chemical Physics
Volume22
Issue number2
DOIs
StatePublished - 2020
Externally publishedYes

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