Anomalous Hall effect engineering via interface modification in Co/Pt multilayers

Shao Long Jiang; Xi Chen; Xu Jing Li; Kang Yang; Jing Yan Zhang; Guang Yang; Yi Wei Liu; Jin Hui Lu; Dong Wei Wang; Jiao Teng; Guang Hua Yu

doi:10.1063/1.4931100

Anomalous Hall effect engineering via interface modification in Co/Pt multilayers

Shao Long Jiang
, Xi Chen
, Xu Jing Li
, Kang Yang
, Jing Yan Zhang
, Guang Yang
, Yi Wei Liu
, Jin Hui Lu
, Dong Wei Wang^*
, Jiao Teng
, Guang Hua Yu

^*Corresponding author for this work

University of Science and Technology Beijing
National Center for Nanoscience and Technology

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

An enhanced anomalous Hall effect (AHE) is observed via interface modification in MgO/[Co/Pt]₂/Co/MgO multilayers, due to the insertion of a Hf metal layer at the Co/MgO interface. It is shown that the saturation anomalous Hall resistivity is 215% larger than that in the multilayers without Hf insertion. More importantly, thermally stable AHE and perpendicular magnetic anisotropy features are obtained in MgO/[Co/Pt]₂/Co/Hf/MgO multilayers. The AHE is improved for sample MgO/[Co/Pt]₂/Co/Hf/MgO by annealing, which is attributed to the enhancement of the side jump contribution.

Original language	English
Article number	112404
Journal	Applied Physics Letters
Volume	107
Issue number	11
DOIs	https://doi.org/10.1063/1.4931100
State	Published - 14 Sep 2015
Externally published	Yes

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@article{fdd8b59a5d2d427897dce53fc1e2e117,

title = "Anomalous Hall effect engineering via interface modification in Co/Pt multilayers",

abstract = "An enhanced anomalous Hall effect (AHE) is observed via interface modification in MgO/[Co/Pt]2/Co/MgO multilayers, due to the insertion of a Hf metal layer at the Co/MgO interface. It is shown that the saturation anomalous Hall resistivity is 215\% larger than that in the multilayers without Hf insertion. More importantly, thermally stable AHE and perpendicular magnetic anisotropy features are obtained in MgO/[Co/Pt]2/Co/Hf/MgO multilayers. The AHE is improved for sample MgO/[Co/Pt]2/Co/Hf/MgO by annealing, which is attributed to the enhancement of the side jump contribution.",

author = "Jiang, \{Shao Long\} and Xi Chen and Li, \{Xu Jing\} and Kang Yang and Zhang, \{Jing Yan\} and Guang Yang and Liu, \{Yi Wei\} and Lu, \{Jin Hui\} and Wang, \{Dong Wei\} and Jiao Teng and Yu, \{Guang Hua\}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = sep,

day = "14",

doi = "10.1063/1.4931100",

language = "英语",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - Anomalous Hall effect engineering via interface modification in Co/Pt multilayers

AU - Jiang, Shao Long

AU - Chen, Xi

AU - Li, Xu Jing

AU - Yang, Kang

AU - Zhang, Jing Yan

AU - Yang, Guang

AU - Liu, Yi Wei

AU - Lu, Jin Hui

AU - Wang, Dong Wei

AU - Teng, Jiao

AU - Yu, Guang Hua

PY - 2015/9/14

Y1 - 2015/9/14

N2 - An enhanced anomalous Hall effect (AHE) is observed via interface modification in MgO/[Co/Pt]2/Co/MgO multilayers, due to the insertion of a Hf metal layer at the Co/MgO interface. It is shown that the saturation anomalous Hall resistivity is 215% larger than that in the multilayers without Hf insertion. More importantly, thermally stable AHE and perpendicular magnetic anisotropy features are obtained in MgO/[Co/Pt]2/Co/Hf/MgO multilayers. The AHE is improved for sample MgO/[Co/Pt]2/Co/Hf/MgO by annealing, which is attributed to the enhancement of the side jump contribution.

AB - An enhanced anomalous Hall effect (AHE) is observed via interface modification in MgO/[Co/Pt]2/Co/MgO multilayers, due to the insertion of a Hf metal layer at the Co/MgO interface. It is shown that the saturation anomalous Hall resistivity is 215% larger than that in the multilayers without Hf insertion. More importantly, thermally stable AHE and perpendicular magnetic anisotropy features are obtained in MgO/[Co/Pt]2/Co/Hf/MgO multilayers. The AHE is improved for sample MgO/[Co/Pt]2/Co/Hf/MgO by annealing, which is attributed to the enhancement of the side jump contribution.

UR - https://www.scopus.com/pages/publications/84941915829

U2 - 10.1063/1.4931100

DO - 10.1063/1.4931100

M3 - 文章

AN - SCOPUS:84941915829

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112404

ER -

Anomalous Hall effect engineering via interface modification in Co/Pt multilayers

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