Annealing-induced changes in electrical characteristics of Al/Al-rich Al2O3/p-Si Diodes

Zhen Liu; T. P. Chen; Yang Liu; Zhan Hong Cen; Shu Zhu; Ming Yang; Jen It Wong; Yi Bin Li; Sam Zhang

doi:10.1109/TED.2010.2089461

Annealing-induced changes in electrical characteristics of Al/Al-rich Al₂O₃/p-Si Diodes

Zhen Liu^*
, T. P. Chen
, Yang Liu
, Zhan Hong Cen
, Shu Zhu
, Ming Yang
, Jen It Wong
, Yi Bin Li
, Sam Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Al-rich Al₂O₃ thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 °C for different durations to form Al/Al-rich Al₂O ₃/_p-Sidiodes. The annealing causes reactions at the Al-rich Al₂O₃/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitancevoltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al₂O₃; layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.

Original language	English
Article number	5648458
Pages (from-to)	33-38
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	1
DOIs	https://doi.org/10.1109/TED.2010.2089461
State	Published - Jan 2011
Externally published	Yes

Keywords

Aluminum-rich aluminum oxide
annealing effect
capacitance-voltage characteristics
current-voltage characteristics
diode memory
metal-insulator-semiconductor (MIS) diodes

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title = "Annealing-induced changes in electrical characteristics of Al/Al-rich Al2O3/p-Si Diodes",

abstract = "Al-rich Al2O3 thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 °C for different durations to form Al/Al-rich Al2O 3/p-Sidiodes. The annealing causes reactions at the Al-rich Al2O3/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitancevoltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al2O3; layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.",

keywords = "Aluminum-rich aluminum oxide, annealing effect, capacitance-voltage characteristics, current-voltage characteristics, diode memory, metal-insulator-semiconductor (MIS) diodes",

author = "Zhen Liu and Chen, \{T. P.\} and Yang Liu and Cen, \{Zhan Hong\} and Shu Zhu and Ming Yang and Wong, \{Jen It\} and Li, \{Yi Bin\} and Sam Zhang",

year = "2011",

month = jan,

doi = "10.1109/TED.2010.2089461",

language = "英语",

volume = "58",

pages = "33--38",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

TY - JOUR

T1 - Annealing-induced changes in electrical characteristics of Al/Al-rich Al2O3/p-Si Diodes

AU - Liu, Zhen

AU - Chen, T. P.

AU - Liu, Yang

AU - Cen, Zhan Hong

AU - Zhu, Shu

AU - Yang, Ming

AU - Wong, Jen It

AU - Li, Yi Bin

AU - Zhang, Sam

PY - 2011/1

Y1 - 2011/1

N2 - Al-rich Al2O3 thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 °C for different durations to form Al/Al-rich Al2O 3/p-Sidiodes. The annealing causes reactions at the Al-rich Al2O3/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitancevoltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al2O3; layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.

AB - Al-rich Al2O3 thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 °C for different durations to form Al/Al-rich Al2O 3/p-Sidiodes. The annealing causes reactions at the Al-rich Al2O3/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitancevoltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al2O3; layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.

KW - Aluminum-rich aluminum oxide

KW - annealing effect

KW - capacitance-voltage characteristics

KW - current-voltage characteristics

KW - diode memory

KW - metal-insulator-semiconductor (MIS) diodes

UR - https://www.scopus.com/pages/publications/78650899524

U2 - 10.1109/TED.2010.2089461

DO - 10.1109/TED.2010.2089461

M3 - 文章

AN - SCOPUS:78650899524

SN - 0018-9383

VL - 58

SP - 33

EP - 38

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

M1 - 5648458

ER -

Annealing-induced changes in electrical characteristics of Al/Al-rich Al₂O₃/p-Si Diodes

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Keywords

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