Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

Jie Shen; Xiao Yu; Jie Zhang; Haowen Zhong; Xiaojun Cui; Guoying Liang; Xiang Yu; Wanying Huang; Ijaz Shahid; Xiaofu Zhang; Sha Yan; Xiaoyun Le

doi:10.1016/j.nimb.2018.02.011

Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

Jie Shen
, Xiao Yu
, Jie Zhang
, Haowen Zhong
, Xiaojun Cui
, Guoying Liang
, Xiang Yu
, Wanying Huang
, Ijaz Shahid
, Xiaofu Zhang
, Sha Yan
, Xiaoyun Le^*

^*Corresponding author for this work

Beihang University
Tomsk Polytechnic University
Peking University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters’ formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.

Original language	English
Pages (from-to)	7-12
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	421
DOIs	https://doi.org/10.1016/j.nimb.2018.02.011
State	Published - 15 Apr 2018

Keywords

Crater
Finite element method
Intense pulsed ion beam
Single crystal silicon
Thermal field

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10.1016/j.nimb.2018.02.011

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Shen, J., Yu, X., Zhang, J., Zhong, H., Cui, X., Liang, G., Yu, X., Huang, W., Shahid, I., Zhang, X., Yan, S., & Le, X. (2018). Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 421, 7-12. https://doi.org/10.1016/j.nimb.2018.02.011

@article{80b65876d8984db08ae323255036d10f,

title = "Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation",

abstract = "Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters{\textquoteright} formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.",

keywords = "Crater, Finite element method, Intense pulsed ion beam, Single crystal silicon, Thermal field",

author = "Jie Shen and Xiao Yu and Jie Zhang and Haowen Zhong and Xiaojun Cui and Guoying Liang and Xiang Yu and Wanying Huang and Ijaz Shahid and Xiaofu Zhang and Sha Yan and Xiaoyun Le",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = apr,

day = "15",

doi = "10.1016/j.nimb.2018.02.011",

language = "英语",

volume = "421",

pages = "7--12",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

}

Shen, J, Yu, X, Zhang, J, Zhong, H, Cui, X, Liang, G, Yu, X, Huang, W, Shahid, I, Zhang, X, Yan, S & Le, X 2018, 'Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 421, pp. 7-12. https://doi.org/10.1016/j.nimb.2018.02.011

TY - JOUR

T1 - Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

AU - Shen, Jie

AU - Yu, Xiao

AU - Zhang, Jie

AU - Zhong, Haowen

AU - Cui, Xiaojun

AU - Liang, Guoying

AU - Yu, Xiang

AU - Huang, Wanying

AU - Shahid, Ijaz

AU - Zhang, Xiaofu

AU - Yan, Sha

AU - Le, Xiaoyun

PY - 2018/4/15

Y1 - 2018/4/15

N2 - Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters’ formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.

AB - Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters’ formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.

KW - Crater

KW - Finite element method

KW - Intense pulsed ion beam

KW - Single crystal silicon

KW - Thermal field

UR - https://www.scopus.com/pages/publications/85042195768

U2 - 10.1016/j.nimb.2018.02.011

DO - 10.1016/j.nimb.2018.02.011

M3 - 文章

AN - SCOPUS:85042195768

SN - 0168-583X

VL - 421

SP - 7

EP - 12

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

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