Analytical Switching Loss Modeling for SiC MOSFETs Based Traction Systems for Electric Vehicles

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper, the loss of silicon carbide (SiC) MOSFETs based electric vehicle (EV) traction systems are investigated comprehensively. The loss of SiC MOSFETs are analyzed and modeled based on the commutation process in the inverter. The analysis model includes parasitic inductance, parasitic capacitance nonlinearity, transconductance nonlinearity, body diode reverse recovery, and parasitic capacitance charging and discharging. The simulation results confirm the losses models of SiC MOSFETs.

Original languageEnglish
JournalEnergy Proceedings
Volume12
DOIs
StatePublished - 2020
EventApplied Energy Symposium: Low Carbon Cities and Urban Energy Systems, CUE 2020 - Virtual, Online
Duration: 10 Oct 202017 Oct 2020

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Electric vehicle traction systems
  • Losses
  • SiC MOSFETs

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