TY - GEN
T1 - An Improved Active Gate Drive Method for SiC MOSFET Better Switching Performance
AU - Xu, Congwenm
AU - Ma, Qishuang
AU - Xu, Ping
AU - Cui, Tongkai
AU - Zhang, Poming
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/14
Y1 - 2018/12/14
N2 - This paper proposes an improved new SiC MOSFET gate drive method to reduce overshoots in current and voltage, EMI (electromagnetic interference), and switching oscillations. Compared with Si MOSFET, SiC MOSFETs can work under higher switching speed and higher supply voltage, which results in stronger oscillations, EMI and more losses. Therefore, reducing the switching oscillation and studying the switching loss is an important research direction in the field of power electronics. The theoretical derivation of the causes of oscillations was given and lists the oscillation equations in this paper. In addition, it is proposed to control the switching oscillation and the switching loss by increasing the gate resistance during the Miller platform. Considering that the oscillation of the gate voltage has an important influence on the switching of the gate resistance, the oscillation equation of the gate voltage is studied carefully. On the other hand, the feedback part of the gate voltage is added to suppress the gate oscillation and the output oscillation to some extent. Finally, the circuit element parameters were optimized to get better simulation results with Pspice compared with the traditional hard switching.
AB - This paper proposes an improved new SiC MOSFET gate drive method to reduce overshoots in current and voltage, EMI (electromagnetic interference), and switching oscillations. Compared with Si MOSFET, SiC MOSFETs can work under higher switching speed and higher supply voltage, which results in stronger oscillations, EMI and more losses. Therefore, reducing the switching oscillation and studying the switching loss is an important research direction in the field of power electronics. The theoretical derivation of the causes of oscillations was given and lists the oscillation equations in this paper. In addition, it is proposed to control the switching oscillation and the switching loss by increasing the gate resistance during the Miller platform. Considering that the oscillation of the gate voltage has an important influence on the switching of the gate resistance, the oscillation equation of the gate voltage is studied carefully. On the other hand, the feedback part of the gate voltage is added to suppress the gate oscillation and the output oscillation to some extent. Finally, the circuit element parameters were optimized to get better simulation results with Pspice compared with the traditional hard switching.
KW - Active gate drive
KW - EMI
KW - SiC MOSFET
KW - Switching loss
KW - Switching oscillation
UR - https://www.scopus.com/pages/publications/85060397637
U2 - 10.1109/IAEAC.2018.8577630
DO - 10.1109/IAEAC.2018.8577630
M3 - 会议稿件
AN - SCOPUS:85060397637
T3 - Proceedings of 2018 IEEE 3rd Advanced Information Technology, Electronic and Automation Control Conference, IAEAC 2018
SP - 1114
EP - 1119
BT - Proceedings of 2018 IEEE 3rd Advanced Information Technology, Electronic and Automation Control Conference, IAEAC 2018
A2 - Xu, Bing
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd IEEE Advanced Information Technology, Electronic and Automation Control Conference, IAEAC 2018
Y2 - 12 October 2018 through 14 October 2018
ER -