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An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

  • C. Gould*
  • , S. Mark
  • , K. Pappert
  • , R. G. Dengel
  • , J. Wenisch
  • , R. P. Campion
  • , A. W. Rushforth
  • , D. Chiba
  • , Z. Li
  • , X. Liu
  • , W. Van Roy
  • , H. Ohno
  • , J. K. Furdyna
  • , B. Gallagher
  • , K. Brunner
  • , G. Schmidt
  • , L. W. Molenkamp
  • *Corresponding author for this work
  • University of Würzburg
  • University of Nottingham
  • Japan Science and Technology Agency
  • Tohoku University
  • Interuniversitair Micro-Elektronica Centrum
  • University of Notre Dame

Research output: Contribution to journalArticlepeer-review

Abstract

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify the contributions of the various higher-order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.

Original languageEnglish
Article number055007
JournalNew Journal of Physics
Volume10
DOIs
StatePublished - 23 May 2008
Externally publishedYes

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