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An anomalous Hall effect in altermagnetic ruthenium dioxide

  • Zexin Feng
  • , Xiaorong Zhou
  • , Libor Šmejkal
  • , Lei Wu
  • , Zengwei Zhu
  • , Huixin Guo
  • , Rafael González-Hernández
  • , Xiaoning Wang
  • , Han Yan
  • , Peixin Qin
  • , Xin Zhang
  • , Haojiang Wu
  • , Hongyu Chen
  • , Ziang Meng
  • , Li Liu
  • , Zhengcai Xia
  • , Jairo Sinova
  • , Tomáš Jungwirth
  • , Zhiqi Liu*
  • *Corresponding author for this work
  • Beihang University
  • Johannes Gutenberg University Mainz
  • Czech Academy of Sciences
  • Huazhong University of Science and Technology
  • Universidad del Norte
  • University of Nottingham

Research output: Contribution to journal › Article › peer-review

Abstract

The anomalous Hall effect is a time-reversal symmetry-breaking magneto-electronic phenomenon originally discovered in ferromagnets. Recently, ruthenium dioxide (RuO2) with a compensated antiparallel magnetic order has been predicted to generate an anomalous Hall effect of comparable strength to ferromagnets. The phenomenon arises from an altermagnetic phase of RuO2 with a characteristic alternating spin polarization in both real-space crystal structure and momentum-space band structure. Here we report an anomalous Hall effect in RuO2 with an anomalous Hall conductivity exceeding 1,000 Ω−1 cm−1. We combine the vector magnetometry and magneto-transport measurements of epitaxial RuO2 films of different crystallographic orientations. We show that the anomalous Hall effect dominates over an ordinary Hall contribution, and a contribution due to a weak field-induced magnetization. Our results could lead to the exploration of topological Berry phases and dissipationless quantum transport in crystals of abundant elements and with a compensated antiparallel magnetic order.

Original languageEnglish
Pages (from-to)735-743
Number of pages9
JournalNature Electronics
Volume5
Issue number11
DOIs
StatePublished - Nov 2022

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