TY - GEN
T1 - An AlN-based piezoelectric micro-machined ultrasonic transducer (pMUT) array
AU - Zhu, Qifeng
AU - Chen, Tao
AU - Liu, Huicong
AU - Sun, Lining
AU - Wang, Tao
AU - Lee, Chengkuo
AU - Le, Xianhao
AU - Xie, Jin
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - The development of wireless energy transfer is critical to the promotion of implantable medical devices (IMDs). In this paper, an aluminum nitride (AlN) based piezoelectric micromachined ultrasonic transducer (pMUT) array is designed, fabricated and characterized, which can be a potential power supply for IMDs. The pMUT array is ideally suitable for integration with wireless-powered system since it is fabricated from miniaturized AlN membrane array of 4×4 units. Both the simulation and experiment are conducted to characterize the pMUT device. The transmitting sensitivity of the fabricated pMUT array is measured as 83 nm/V at a resonant frequency of 527 kHz.
AB - The development of wireless energy transfer is critical to the promotion of implantable medical devices (IMDs). In this paper, an aluminum nitride (AlN) based piezoelectric micromachined ultrasonic transducer (pMUT) array is designed, fabricated and characterized, which can be a potential power supply for IMDs. The pMUT array is ideally suitable for integration with wireless-powered system since it is fabricated from miniaturized AlN membrane array of 4×4 units. Both the simulation and experiment are conducted to characterize the pMUT device. The transmitting sensitivity of the fabricated pMUT array is measured as 83 nm/V at a resonant frequency of 527 kHz.
UR - https://www.scopus.com/pages/publications/85006954236
U2 - 10.1109/NANO.2016.7751529
DO - 10.1109/NANO.2016.7751529
M3 - 会议稿件
AN - SCOPUS:85006954236
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 731
EP - 734
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -