Abstract
The electronic structure of AlΣ9 tilt grain boundary with segregated impurity atoms of Na, Ca, Si and S, respectively, has been investigated by an ab initio pseudopotential method. Na and Ca segregation causes the boundary to expand and the charge density to decrease significantly. There forms several weak bond regions. Si segregation increases the charge density between Si and the neighboring Al atom. There forms a stronger Al-Si bond that is a mixture of covalent and metallic character in the boundary. For S segregation, though there forms the stronger bond between Al and S atom, some Al-S bonds may become weaker than the former Al-Al bonds because of the charge density decrease. It is concluded that the mechanism of Na or Ca-promoted Al grain boundary embrittlement is one kind of 'decohesion model', that of Si is 'bond mobility model'. It can't be decided the embrittlement mechanism by S segregation is classified into 'bond mobility model' or 'decohesion model'.
| Original language | English |
|---|---|
| Pages (from-to) | 283-288 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 699 |
| State | Published - 2002 |
| Externally published | Yes |
| Event | Electrically Based Microstructural Characterization III - Boston, MA, United States Duration: 26 Nov 2001 → 29 Nov 2001 |
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