Accurately nonselective and selective etching of GaAs/Al 0.8Ga0.2As/AlAs structure for making air-gap cavity

Zhen Zhou; Yun Du; Yongqing Huang; Ronghan Wu; Xiaomin Ren

doi:10.1117/12.521698

Accurately nonselective and selective etching of GaAs/Al _0.8Ga_0.2As/AlAs structure for making air-gap cavity

Zhen Zhou^*
, Yun Du
, Yongqing Huang
, Ronghan Wu
, Xiaomin Ren

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We have demonstrated a wet etching technique capable of fabricating air-gap cavity. The process utilizes nonselective and selective etchants respectively to form air-gap cavity. The etching characteristics of GaAs/Al _0.8Ga_0.2As/AlAs structure in different nonselective and selective etchants are investigated. The volumetric 3:2:20 ratios of H ₃PO₄/H₂O₂/H₂O solution and volumetric 600:1 ratio of DI water/buffered oxide [mixture of 7:1 NH ₄F(36%)-HF(6.4%)] solution are better nonselective and selective etchants respectively. We have used this process technique to form a tunable air-gap cavity optical filter. The measure results of the transmission spectral show that the air-gap cavity has high optical quality. These simple etching processes can be applied to fabricate the air-gap cavity devices.

Original language	English
Pages (from-to)	889-895
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5280 II
DOIs	https://doi.org/10.1117/12.521698
State	Published - 2003
Externally published	Yes
Event	APOC 2003: Asia-Pacific Optical and Wireless Communications: Materials, Active Devices, and Optical Amplifier - Wuhan, China Duration: 4 Nov 2003 → 6 Nov 2003

Keywords

Air-gap cavity
Al GaAs
AlAs
GaAs
Nonselective etching
Selective etching

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10.1117/12.521698

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@article{5061ad9a877b47c5910e634a989f859e,

title = "Accurately nonselective and selective etching of GaAs/Al 0.8Ga0.2As/AlAs structure for making air-gap cavity",

abstract = "We have demonstrated a wet etching technique capable of fabricating air-gap cavity. The process utilizes nonselective and selective etchants respectively to form air-gap cavity. The etching characteristics of GaAs/Al 0.8Ga0.2As/AlAs structure in different nonselective and selective etchants are investigated. The volumetric 3:2:20 ratios of H 3PO4/H2O2/H2O solution and volumetric 600:1 ratio of DI water/buffered oxide [mixture of 7:1 NH 4F(36\%)-HF(6.4\%)] solution are better nonselective and selective etchants respectively. We have used this process technique to form a tunable air-gap cavity optical filter. The measure results of the transmission spectral show that the air-gap cavity has high optical quality. These simple etching processes can be applied to fabricate the air-gap cavity devices.",

keywords = "Air-gap cavity, Al GaAs, AlAs, GaAs, Nonselective etching, Selective etching",

author = "Zhen Zhou and Yun Du and Yongqing Huang and Ronghan Wu and Xiaomin Ren",

year = "2003",

doi = "10.1117/12.521698",

language = "英语",

volume = "5280 II",

pages = "889--895",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "APOC 2003: Asia-Pacific Optical and Wireless Communications: Materials, Active Devices, and Optical Amplifier ; Conference date: 04-11-2003 Through 06-11-2003",

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TY - JOUR

T1 - Accurately nonselective and selective etching of GaAs/Al 0.8Ga0.2As/AlAs structure for making air-gap cavity

AU - Zhou, Zhen

AU - Du, Yun

AU - Huang, Yongqing

AU - Wu, Ronghan

AU - Ren, Xiaomin

PY - 2003

Y1 - 2003

N2 - We have demonstrated a wet etching technique capable of fabricating air-gap cavity. The process utilizes nonselective and selective etchants respectively to form air-gap cavity. The etching characteristics of GaAs/Al 0.8Ga0.2As/AlAs structure in different nonselective and selective etchants are investigated. The volumetric 3:2:20 ratios of H 3PO4/H2O2/H2O solution and volumetric 600:1 ratio of DI water/buffered oxide [mixture of 7:1 NH 4F(36%)-HF(6.4%)] solution are better nonselective and selective etchants respectively. We have used this process technique to form a tunable air-gap cavity optical filter. The measure results of the transmission spectral show that the air-gap cavity has high optical quality. These simple etching processes can be applied to fabricate the air-gap cavity devices.

AB - We have demonstrated a wet etching technique capable of fabricating air-gap cavity. The process utilizes nonselective and selective etchants respectively to form air-gap cavity. The etching characteristics of GaAs/Al 0.8Ga0.2As/AlAs structure in different nonselective and selective etchants are investigated. The volumetric 3:2:20 ratios of H 3PO4/H2O2/H2O solution and volumetric 600:1 ratio of DI water/buffered oxide [mixture of 7:1 NH 4F(36%)-HF(6.4%)] solution are better nonselective and selective etchants respectively. We have used this process technique to form a tunable air-gap cavity optical filter. The measure results of the transmission spectral show that the air-gap cavity has high optical quality. These simple etching processes can be applied to fabricate the air-gap cavity devices.

KW - Air-gap cavity

KW - Al GaAs

KW - AlAs

KW - GaAs

KW - Nonselective etching

KW - Selective etching

UR - https://www.scopus.com/pages/publications/2942696428

U2 - 10.1117/12.521698

DO - 10.1117/12.521698

M3 - 会议文章

AN - SCOPUS:2942696428

SN - 0277-786X

VL - 5280 II

SP - 889

EP - 895

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - APOC 2003: Asia-Pacific Optical and Wireless Communications: Materials, Active Devices, and Optical Amplifier

Y2 - 4 November 2003 through 6 November 2003

ER -

Accurately nonselective and selective etching of GaAs/Al _0.8Ga_0.2As/AlAs structure for making air-gap cavity

Abstract

Keywords

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