Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb:SrTiO3 junctions

Hai Lin Huang; Deng Jing Wang; Hong Rui Zhang; Hui Zhang; Chang Min Xiong; Ji Rong Sun; Bao Gen Shen

doi:10.1088/1674-1056/26/7/077302

Abundant photoelectronic behaviors of La_0.67Sr_0.33MnO₃/Nb:SrTiO₃ junctions

Hai Lin Huang
, Deng Jing Wang^*
, Hong Rui Zhang
, Hui Zhang
, Chang Min Xiong
, Ji Rong Sun
, Bao Gen Shen

^*Corresponding author for this work

Wuhan University of Science and Technology
CAS - Institute of Physics
Beijing Normal University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Temperature dependence on rectifying and photoelectronic properties of La_0.67Sr_0.33MnO₃/Nb:SrTiO₃ (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.

Original language	English
Article number	077302
Journal	Chinese Physics B
Volume	26
Issue number	7
DOIs	https://doi.org/10.1088/1674-1056/26/7/077302
State	Published - Jun 2017
Externally published	Yes

Keywords

Heterojunction
Manganite
Photocurrent

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10.1088/1674-1056/26/7/077302

Cite this

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title = "Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb:SrTiO3 junctions",

abstract = "Temperature dependence on rectifying and photoelectronic properties of La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.",

keywords = "Heterojunction, Manganite, Photocurrent",

author = "Huang, \{Hai Lin\} and Wang, \{Deng Jing\} and Zhang, \{Hong Rui\} and Hui Zhang and Xiong, \{Chang Min\} and Sun, \{Ji Rong\} and Shen, \{Bao Gen\}",

note = "Publisher Copyright: {\textcopyright} 2017 Chinese Physical Society and IOP Publishing Ltd.",

year = "2017",

month = jun,

doi = "10.1088/1674-1056/26/7/077302",

language = "英语",

volume = "26",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb:SrTiO3 junctions

AU - Huang, Hai Lin

AU - Wang, Deng Jing

AU - Zhang, Hong Rui

AU - Zhang, Hui

AU - Xiong, Chang Min

AU - Sun, Ji Rong

AU - Shen, Bao Gen

PY - 2017/6

Y1 - 2017/6

N2 - Temperature dependence on rectifying and photoelectronic properties of La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.

AB - Temperature dependence on rectifying and photoelectronic properties of La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.

KW - Heterojunction

KW - Manganite

KW - Photocurrent

UR - https://www.scopus.com/pages/publications/85022065854

U2 - 10.1088/1674-1056/26/7/077302

DO - 10.1088/1674-1056/26/7/077302

M3 - 文章

AN - SCOPUS:85022065854

SN - 1674-1056

VL - 26

JO - Chinese Physics B

JF - Chinese Physics B

IS - 7

M1 - 077302

ER -

Abundant photoelectronic behaviors of La_0.67Sr_0.33MnO₃/Nb:SrTiO₃ junctions

Abstract

Keywords

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