Abnormal rectifying behavior of In/SrTiO3/SrTiO3 :Nb capacitor

Yimin Cui

doi:10.1016/j.ssc.2008.06.029

Abnormal rectifying behavior of In/SrTiO₃/SrTiO₃ :Nb capacitor

Yimin Cui^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In/SrTiO₃/SrTiO₃:Nb capacitors have been fabricated by depositing SrTiO₃ thin film on Nb-1 wt%-doped SrTiO₃ substrate and using In as the top electrode. The current-voltage characteristics were measured and backward rectifying characteristics are found below room temperature. The interesting observation is that at constant negative bias the leakage current increases with decreasing temperature below 150 K. Analysis shows that the abnormal increasing current was determined by the tunneling process through the SrTiO₃/SrTiO₃:Nb junction. This work demonstrates that tunneling diode may be realized in homologous perovskite oxides and engineered by distortions and defects.

Original language	English
Pages (from-to)	350-352
Number of pages	3
Journal	Solid State Communications
Volume	147
Issue number	9-10
DOIs	https://doi.org/10.1016/j.ssc.2008.06.029
State	Published - Sep 2008

Keywords

A. Nb-1.0wt.%-doped SrTiO3
C. SrTiO/SrTiO:Nb junction
D. Tunneling

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10.1016/j.ssc.2008.06.029

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title = "Abnormal rectifying behavior of In/SrTiO3/SrTiO3 :Nb capacitor",

abstract = "In/SrTiO3/SrTiO3:Nb capacitors have been fabricated by depositing SrTiO3 thin film on Nb-1 wt\%-doped SrTiO3 substrate and using In as the top electrode. The current-voltage characteristics were measured and backward rectifying characteristics are found below room temperature. The interesting observation is that at constant negative bias the leakage current increases with decreasing temperature below 150 K. Analysis shows that the abnormal increasing current was determined by the tunneling process through the SrTiO3/SrTiO3:Nb junction. This work demonstrates that tunneling diode may be realized in homologous perovskite oxides and engineered by distortions and defects.",

keywords = "A. Nb-1.0wt.\%-doped SrTiO3, C. SrTiO/SrTiO:Nb junction, D. Tunneling",

author = "Yimin Cui",

year = "2008",

month = sep,

doi = "10.1016/j.ssc.2008.06.029",

language = "英语",

volume = "147",

pages = "350--352",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "9-10",

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TY - JOUR

T1 - Abnormal rectifying behavior of In/SrTiO3/SrTiO3 :Nb capacitor

AU - Cui, Yimin

PY - 2008/9

Y1 - 2008/9

N2 - In/SrTiO3/SrTiO3:Nb capacitors have been fabricated by depositing SrTiO3 thin film on Nb-1 wt%-doped SrTiO3 substrate and using In as the top electrode. The current-voltage characteristics were measured and backward rectifying characteristics are found below room temperature. The interesting observation is that at constant negative bias the leakage current increases with decreasing temperature below 150 K. Analysis shows that the abnormal increasing current was determined by the tunneling process through the SrTiO3/SrTiO3:Nb junction. This work demonstrates that tunneling diode may be realized in homologous perovskite oxides and engineered by distortions and defects.

AB - In/SrTiO3/SrTiO3:Nb capacitors have been fabricated by depositing SrTiO3 thin film on Nb-1 wt%-doped SrTiO3 substrate and using In as the top electrode. The current-voltage characteristics were measured and backward rectifying characteristics are found below room temperature. The interesting observation is that at constant negative bias the leakage current increases with decreasing temperature below 150 K. Analysis shows that the abnormal increasing current was determined by the tunneling process through the SrTiO3/SrTiO3:Nb junction. This work demonstrates that tunneling diode may be realized in homologous perovskite oxides and engineered by distortions and defects.

KW - A. Nb-1.0wt.%-doped SrTiO3

KW - C. SrTiO/SrTiO:Nb junction

KW - D. Tunneling

UR - https://www.scopus.com/pages/publications/48049111567

U2 - 10.1016/j.ssc.2008.06.029

DO - 10.1016/j.ssc.2008.06.029

M3 - 文章

AN - SCOPUS:48049111567

SN - 0038-1098

VL - 147

SP - 350

EP - 352

JO - Solid State Communications

JF - Solid State Communications

IS - 9-10

ER -

Abnormal rectifying behavior of In/SrTiO₃/SrTiO₃ :Nb capacitor

Abstract

Keywords

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