A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure

Tongsheng Xia; Pilong Yang; Liujun Zhang; Hongge Li

doi:10.1109/ICSICT.2012.6467813

A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure

Tongsheng Xia^*
, Pilong Yang
, Liujun Zhang
, Hongge Li

^*Corresponding author for this work

School of Electronic and Information Engineering

Beihang University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We showed the ballistic quantum transport calculation results for the armchair graphene nanoribbon field effect transistors, based on full complex band structure. We then compared the minimum leakage current in the ID-VG curve and the on current in the ID-VD curve. It is demonstrated that in order to have the best performance of the nanoscale graphene nanoribbon field effect transistors, trade offs are found for the off state leakage current and the on state current, i.e., we found that a smaller/larger off state leakage current in ID-VG curve may be accompanied with a smaller/larger on current in ID-VD curve, which is then explained by full complex band structure characteristics.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467813
State	Published - 2012
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Publication series

Name	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 1/11/12

Access to Document

10.1109/ICSICT.2012.6467813

Cite this

Xia, T., Yang, P., Zhang, L., & Li, H. (2012). A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467813 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467813

Xia, Tongsheng ; Yang, Pilong ; Zhang, Liujun et al. / A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure. ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{be7f855b3165462db3bb5f2ceb0ab1ef,

title = "A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure",

abstract = "We showed the ballistic quantum transport calculation results for the armchair graphene nanoribbon field effect transistors, based on full complex band structure. We then compared the minimum leakage current in the ID-VG curve and the on current in the ID-VD curve. It is demonstrated that in order to have the best performance of the nanoscale graphene nanoribbon field effect transistors, trade offs are found for the off state leakage current and the on state current, i.e., we found that a smaller/larger off state leakage current in ID-VG curve may be accompanied with a smaller/larger on current in ID-VD curve, which is then explained by full complex band structure characteristics.",

author = "Tongsheng Xia and Pilong Yang and Liujun Zhang and Hongge Li",

year = "2012",

doi = "10.1109/ICSICT.2012.6467813",

language = "英语",

isbn = "9781467324724",

series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Xia, T, Yang, P, Zhang, L & Li, H 2012, A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467813, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467813

A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure. / Xia, Tongsheng; Yang, Pilong; Zhang, Liujun et al.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467813 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure

AU - Xia, Tongsheng

AU - Yang, Pilong

AU - Zhang, Liujun

AU - Li, Hongge

PY - 2012

Y1 - 2012

N2 - We showed the ballistic quantum transport calculation results for the armchair graphene nanoribbon field effect transistors, based on full complex band structure. We then compared the minimum leakage current in the ID-VG curve and the on current in the ID-VD curve. It is demonstrated that in order to have the best performance of the nanoscale graphene nanoribbon field effect transistors, trade offs are found for the off state leakage current and the on state current, i.e., we found that a smaller/larger off state leakage current in ID-VG curve may be accompanied with a smaller/larger on current in ID-VD curve, which is then explained by full complex band structure characteristics.

AB - We showed the ballistic quantum transport calculation results for the armchair graphene nanoribbon field effect transistors, based on full complex band structure. We then compared the minimum leakage current in the ID-VG curve and the on current in the ID-VD curve. It is demonstrated that in order to have the best performance of the nanoscale graphene nanoribbon field effect transistors, trade offs are found for the off state leakage current and the on state current, i.e., we found that a smaller/larger off state leakage current in ID-VG curve may be accompanied with a smaller/larger on current in ID-VD curve, which is then explained by full complex band structure characteristics.

UR - https://www.scopus.com/pages/publications/84874886829

U2 - 10.1109/ICSICT.2012.6467813

DO - 10.1109/ICSICT.2012.6467813

M3 - 会议稿件

AN - SCOPUS:84874886829

SN - 9781467324724

T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

Y2 - 29 October 2012 through 1 November 2012

ER -

Xia T, Yang P, Zhang L, Li H. A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467813. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2012.6467813

A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure

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