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A Study on the Interface Diffusion of In2O3/ITO Multilayer Thin-Film Thermocouple

  • Yu Qing Xue
  • , Yi Dan Wang
  • , Dong Yang Lei
  • , Yu Feng Sun*
  • *Corresponding author for this work
  • Beihang University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In2O3/ITO multilayer thin film thermocouple is a new type of semiconductor thin-film thermocouple, which has broad application prospects. The interface diffusion between the layers is the main cause of its thermal oxidation failure. In this paper, an interface diffusion model of multilayer films is established based on Fick's second law. A sample of In2O3/ITO thin-film thermocouple was prepared, then designed and conducted high temperature test. According to the test results, the diffusion of substances between the film layers was analyzed. Based on the established interface diffusion model, a simulation calculation is carried out. The influence of interface diffusion on the life of In2O3 and ITO sensitive layer was quantitatively analyzed.

Original languageEnglish
Title of host publicationMaterial Science and Engineering - Selected peer-reviwed full text papers from the 9th Annual International Conference on Material Science and Engineering, ICMSE 2021
EditorsFadi Hage Chehade, Chen Hu, Ke Wang
PublisherTrans Tech Publications Ltd
Pages174-183
Number of pages10
ISBN (Print)9783035715361
DOIs
StatePublished - 2022
Event9th Annual International Conference on Material Science and Engineering, ICMSE 2021 - Virtual, Online
Duration: 22 Jul 202124 Jul 2021

Publication series

NameKey Engineering Materials
Volume905 KEM
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Conference

Conference9th Annual International Conference on Material Science and Engineering, ICMSE 2021
CityVirtual, Online
Period22/07/2124/07/21

Keywords

  • High Temperature Test
  • In2O3/ITO
  • Interface Diffusion
  • Simulation Analysis
  • Thin-film Thermocouple

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