A study on NBTI-induced delay degradation considering stress frequency dependence

  • Zuitoku Shin
  • , Shumpei Morita
  • , Song Bian
  • , Michihiro Shintani
  • , Masayuki Hiromoto
  • , Takashi Sato

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The degradation of transistors in integrated circuits is known to be dependent on stress frequency in addition to the well-known stress duty cycle. This paper analyzes the impact of frequency dependence of the NBTI degradation on a processor-scale circuit under various workload scenarios by using different levels of available information. A simple estimation for wire switching frequency from duty cycle is also proposed. Using real workloads running on MIPS processor, it is found that frequency dependency of the worst path delay is not large since there are many DC stress components independent of frequency. However, frequency dependency of path delay increases when DC component decreases due to execution of multiple applications.

Original languageEnglish
Title of host publication2018 19th International Symposium on Quality Electronic Design, ISQED 2018
PublisherIEEE Computer Society
Pages251-256
Number of pages6
ISBN (Electronic)9781538612149
DOIs
StatePublished - 9 May 2018
Externally publishedYes
Event19th International Symposium on Quality Electronic Design, ISQED 2018 - Santa Clara, United States
Duration: 13 Mar 201814 Mar 2018

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2018-March
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference19th International Symposium on Quality Electronic Design, ISQED 2018
Country/TerritoryUnited States
CitySanta Clara
Period13/03/1814/03/18

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