TY - GEN
T1 - A study of perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque
AU - Wang, Z.
AU - Zhao, W.
AU - Deng, E.
AU - Klein, J.
AU - Chappert, C.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Current-induced spin-transfer torque (STT) is a mainstream method of switching the magnetization of free layer of magnetic tunnel junctions (MTJs) [1-2]. However, currently STT-MTJ is suffering from speed and energy bottlenecks caused by two tradeoffs: firstly, since the critical write current (Ic0) is proportional to the thermal stability barrier (Δ), it is difficult to reduce Ic0 without decreasing Δ. Secondly, the write current is limited to a relative small value to avoid the barrier breakdown, resulting in a low write speed. To overcome these bottlenecks, recent experiments [3-7] provide alternative write schemes in which spin Hall effect (SHE) and Rashba effect are used for switching the three-terminal MTJs (see Fig. 1). However, the applications of these schemes are hindered by some disadvantages: For switching a perpendicular-anisotropy MTJ (p-MTJ), both a charge current and an additional magnetic field are required (see Fig. 1(a)), which adds complexity to architecture. If an in-plane-anisotropy MTJ (i-MTJ) is used instead of p-MTJ, deterministic switching can be achieved by a charge current without the need of magnetic field (see Fig. 1(b)), but i-MTJ is inferior to p-MTJ in the scalability.
AB - Current-induced spin-transfer torque (STT) is a mainstream method of switching the magnetization of free layer of magnetic tunnel junctions (MTJs) [1-2]. However, currently STT-MTJ is suffering from speed and energy bottlenecks caused by two tradeoffs: firstly, since the critical write current (Ic0) is proportional to the thermal stability barrier (Δ), it is difficult to reduce Ic0 without decreasing Δ. Secondly, the write current is limited to a relative small value to avoid the barrier breakdown, resulting in a low write speed. To overcome these bottlenecks, recent experiments [3-7] provide alternative write schemes in which spin Hall effect (SHE) and Rashba effect are used for switching the three-terminal MTJs (see Fig. 1). However, the applications of these schemes are hindered by some disadvantages: For switching a perpendicular-anisotropy MTJ (p-MTJ), both a charge current and an additional magnetic field are required (see Fig. 1(a)), which adds complexity to architecture. If an in-plane-anisotropy MTJ (i-MTJ) is used instead of p-MTJ, deterministic switching can be achieved by a charge current without the need of magnetic field (see Fig. 1(b)), but i-MTJ is inferior to p-MTJ in the scalability.
UR - https://www.scopus.com/pages/publications/84942436886
U2 - 10.1109/INTMAG.2015.7157181
DO - 10.1109/INTMAG.2015.7157181
M3 - 会议稿件
AN - SCOPUS:84942436886
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -