@inproceedings{8283df809bb44fea8b94a3ab22128f16,
title = "A Simplified SiC MOSFET Model for an Abstract View of the Switching Performance",
abstract = "Power semiconductors are a crucial component and a key driver of power electronics. Device modelling is an essential approach to formulating and analyzing the static and dynamic characteristics of power semiconductors. This paper proposes a simplified analytical model for a SiC MOSFET and Schottky barrier diode in a half-bridge configuration. This simplified model is shown to have better interpretability and computational speed, by comparing it with two other commonly used analytical models for benchmarking purpose at different operating points and parasitic inductance. Finally, the intended use case and limitations are discussed.",
keywords = "SiC MOSFETs, analytical model, double pulse test, switching waveform",
author = "Puzhen Yu and Bing Ji and Wenping Cao and Liang Yan",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 4th International Symposium on Electrical, Electronics and Information Engineering, ISEEIE 2024 ; Conference date: 28-08-2024 Through 30-08-2024",
year = "2024",
doi = "10.1109/ISEEIE62461.2024.00023",
language = "英语",
series = "Proceedings - 2024 International Symposium on Electrical, Electronics and Information Engineering, ISEEIE 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "83--87",
booktitle = "Proceedings - 2024 International Symposium on Electrical, Electronics and Information Engineering, ISEEIE 2024",
address = "美国",
}