TY - GEN
T1 - A Review of Wireless Communication Based on GaN Devices
AU - Zhang, Jiatong
AU - Hong, Tao
N1 - Publisher Copyright:
© The Author(s), under exclusive license to Springer Nature Switzerland AG 2026.
PY - 2026
Y1 - 2026
N2 - GaN, short for Gallium Nitride, is one of the third-generation semiconductors. It has brilliant material properties such as large forbidden band width, strong breakdown field strength, high electron mobility, and high current density. These outstanding properties demonstrate that GaN devices will replace the traditional semiconductor materials like Si in many fields such as wireless communication. This paper first introduced the advantages and wide applications of GaN, and then discussed the radio frequency power amplifiers based on GaN material, which is the kay component in wireless applications. Then, the evolution of cellular communications was reviewed in detail, demonstrating the importance of RF power amplifiers. At last, this paper evaluated current applications of GaN RF PAs in wireless communications field and analyzed the challenges and future works of wireless communications based on GaN materials.
AB - GaN, short for Gallium Nitride, is one of the third-generation semiconductors. It has brilliant material properties such as large forbidden band width, strong breakdown field strength, high electron mobility, and high current density. These outstanding properties demonstrate that GaN devices will replace the traditional semiconductor materials like Si in many fields such as wireless communication. This paper first introduced the advantages and wide applications of GaN, and then discussed the radio frequency power amplifiers based on GaN material, which is the kay component in wireless applications. Then, the evolution of cellular communications was reviewed in detail, demonstrating the importance of RF power amplifiers. At last, this paper evaluated current applications of GaN RF PAs in wireless communications field and analyzed the challenges and future works of wireless communications based on GaN materials.
KW - GaN HEMT
KW - power amplifier (PA)
KW - wireless communication applications
UR - https://www.scopus.com/pages/publications/105023183104
U2 - 10.1007/978-3-032-09694-4_35
DO - 10.1007/978-3-032-09694-4_35
M3 - 会议稿件
AN - SCOPUS:105023183104
SN - 9783032096937
T3 - Lecture Notes in Networks and Systems
SP - 459
EP - 470
BT - Proceedings of the International Symposium on Intelligent Computing and Networking 2025 - ISICN 2025
A2 - Rodriguez Martinez, Manuel
A2 - Lu, Kejie
A2 - Ye, Feng
A2 - Qian, Yi
PB - Springer Science and Business Media Deutschland GmbH
T2 - 2nd International Symposium on Intelligent Computing and Networking ISICN 2025
Y2 - 17 March 2025 through 19 March 2025
ER -