A research for influence of temperature on T/R module in radar

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper mainly studies T/R (Transmitter and Receiver) module in radar and its internal solid-state microwave power device, and the mechanisms of performance parameters' change affected by temperature. First, we establish a compact model of solid state microwave power FET (Field Effect Transistor). Second, based on the compact model, a behavioral model of T/R module is developed. By simulating the behavioral model, trends of performance parameters of T/R module under varied temperature conditions can be analyzed. Last, we conduct a series of experiments to verify the behavioral model. Above all, our study aims to provide a reference for the design, analysis and operational reliability of T/R module.

Original languageEnglish
Title of host publicationProceedings of 2015 Prognostics and System Health Management Conference, PHM 2015
EditorsTingdi Zhao, Michael G. Pecht, Shunong Zhang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467385534
DOIs
StatePublished - 12 Jan 2016
EventPrognostics and System Health Management Conference, PHM 2015 - Beijing, China
Duration: 21 Oct 201523 Oct 2015

Publication series

NameProceedings of 2015 Prognostics and System Health Management Conference, PHM 2015

Conference

ConferencePrognostics and System Health Management Conference, PHM 2015
Country/TerritoryChina
CityBeijing
Period21/10/1523/10/15

Keywords

  • T/R module
  • behavioral model
  • operational reliability
  • solid-state microwave power device
  • temperature

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