A Reliability Assessment Approach for GaN-Based Power Supply

  • Liang Jinghao
  • , Sun Bo*
  • , Guo Chunbing
  • , Cui Chengqiang
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The impact of GaN devices on reliability of switch mode power supply (SMPS) is one of the research hotspots in recent years. This paper proposes a reliability assessment method for SMPS with GaN transistor. A simulation model with 3 cells for on-resistance of GaN transistors is proposed. A test platform is used to extract model parameters under different operation conditions. Test results have found that the on-resistance of the GaN device doubled after 50 seconds at 400V bias. after 10 seconds of on-state, the on-resistance drops to a rated value. Then, circuit simulation is carried out to assess the impact of aged GaN transistors on the performance of SMPS. Simulation results have found that after 180 minutes of SMPS operation, the on-resistance of the GaN device rises by 80%, while the efficiency of the power supply drops by 0.1%. Using the simulation model it is possible to calculate the efficiency of the SMPS after long working hours.

Original languageEnglish
Title of host publication2022 23rd International Conference on Electronic Packaging Technology, ICEPT 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665499057
DOIs
StatePublished - 2022
Externally publishedYes
Event23rd International Conference on Electronic Packaging Technology, ICEPT 2022 - Dalian, China
Duration: 10 Aug 202213 Aug 2022

Publication series

Name2022 23rd International Conference on Electronic Packaging Technology, ICEPT 2022

Conference

Conference23rd International Conference on Electronic Packaging Technology, ICEPT 2022
Country/TerritoryChina
CityDalian
Period10/08/2213/08/22

Keywords

  • GaN Device
  • Reliability
  • Switch Mode Power Supply

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