A physical based analytic model of RRAM operation for circuit simulation

P. Huang; X. Y. Liu; W. H. Li; Y. X. Deng; B. Chen; Y. Lu; B. Gao; L. Zeng; K. L. Wei; G. Du; X. Zhang; J. F. Kang

doi:10.1109/IEDM.2012.6479110

A physical based analytic model of RRAM operation for circuit simulation

P. Huang^*
, X. Y. Liu
, W. H. Li
, Y. X. Deng
, B. Chen
, Y. Lu
, B. Gao
, L. Zeng
, K. L. Wei
, G. Du
, X. Zhang
, J. F. Kang

^*Corresponding author for this work

Peking University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

33 Scopus citations

Abstract

A physical based analytic model of metal oxide based RRAM cell under DC and pulse operation modes is presented. In this model, the transport behaviors of oxygen vacancies and oxygen ions, metal conductivity, electron hopping and heat conduction and the parasitic capacitance and resistance effects are covered. The developed analytic model is verified and calibrated by measured data. Furthermore, we implement the analytic model in a 2×2 RRAM array simulation and investigate the reliability of RRAM array for the first time.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	26.6.1-26.6.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479110
State	Published - 2012
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 10 Dec 2012 → 13 Dec 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	10/12/12 → 13/12/12

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10.1109/IEDM.2012.6479110

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Huang, P., Liu, X. Y., Li, W. H., Deng, Y. X., Chen, B., Lu, Y., Gao, B., Zeng, L., Wei, K. L., Du, G., Zhang, X., & Kang, J. F. (2012). A physical based analytic model of RRAM operation for circuit simulation. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 26.6.1-26.6.4). Article 6479110 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479110

@inproceedings{6b1633b403364434a93f8b02b5602a6c,

title = "A physical based analytic model of RRAM operation for circuit simulation",

abstract = "A physical based analytic model of metal oxide based RRAM cell under DC and pulse operation modes is presented. In this model, the transport behaviors of oxygen vacancies and oxygen ions, metal conductivity, electron hopping and heat conduction and the parasitic capacitance and resistance effects are covered. The developed analytic model is verified and calibrated by measured data. Furthermore, we implement the analytic model in a 2×2 RRAM array simulation and investigate the reliability of RRAM array for the first time.",

author = "P. Huang and Liu, \{X. Y.\} and Li, \{W. H.\} and Deng, \{Y. X.\} and B. Chen and Y. Lu and B. Gao and L. Zeng and Wei, \{K. L.\} and G. Du and X. Zhang and Kang, \{J. F.\}",

year = "2012",

doi = "10.1109/IEDM.2012.6479110",

language = "英语",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "26.6.1--26.6.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Huang, P, Liu, XY, Li, WH, Deng, YX, Chen, B, Lu, Y, Gao, B, Zeng, L, Wei, KL, Du, G, Zhang, X & Kang, JF 2012, A physical based analytic model of RRAM operation for circuit simulation. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479110, Technical Digest - International Electron Devices Meeting, IEDM, pp. 26.6.1-26.6.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6479110

A physical based analytic model of RRAM operation for circuit simulation. / Huang, P.; Liu, X. Y.; Li, W. H. et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 26.6.1-26.6.4 6479110 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A physical based analytic model of RRAM operation for circuit simulation

AU - Huang, P.

AU - Liu, X. Y.

AU - Li, W. H.

AU - Deng, Y. X.

AU - Chen, B.

AU - Lu, Y.

AU - Gao, B.

AU - Zeng, L.

AU - Wei, K. L.

AU - Du, G.

AU - Zhang, X.

AU - Kang, J. F.

PY - 2012

Y1 - 2012

N2 - A physical based analytic model of metal oxide based RRAM cell under DC and pulse operation modes is presented. In this model, the transport behaviors of oxygen vacancies and oxygen ions, metal conductivity, electron hopping and heat conduction and the parasitic capacitance and resistance effects are covered. The developed analytic model is verified and calibrated by measured data. Furthermore, we implement the analytic model in a 2×2 RRAM array simulation and investigate the reliability of RRAM array for the first time.

AB - A physical based analytic model of metal oxide based RRAM cell under DC and pulse operation modes is presented. In this model, the transport behaviors of oxygen vacancies and oxygen ions, metal conductivity, electron hopping and heat conduction and the parasitic capacitance and resistance effects are covered. The developed analytic model is verified and calibrated by measured data. Furthermore, we implement the analytic model in a 2×2 RRAM array simulation and investigate the reliability of RRAM array for the first time.

UR - https://www.scopus.com/pages/publications/84876137746

U2 - 10.1109/IEDM.2012.6479110

DO - 10.1109/IEDM.2012.6479110

M3 - 会议稿件

AN - SCOPUS:84876137746

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 26.6.1-26.6.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

A physical based analytic model of RRAM operation for circuit simulation

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