A novel SEU-tolerant MRAM latch circuit based on C-element

Deming Zhang; Wang Kang; Yuanqing Cheng; Geifei Wang; Dafine Ravelosona; Youguang Zhang; Jacques Olivier Klein; Weisheng Zhao

doi:10.1109/ICSICT.2014.7021415

A novel SEU-tolerant MRAM latch circuit based on C-element

Deming Zhang
, Wang Kang
, Yuanqing Cheng
, Geifei Wang
, Dafine Ravelosona
, Youguang Zhang
, Jacques Olivier Klein
, Weisheng Zhao^*

^*Corresponding author for this work

CNRS
Beihang University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit, which is based on the special device C-element. By using a physics-based MTJ compact model and the 40nm design kit, hybrid simulations have been performed and simulation results show that the proposed MRAM latch circuit is immune to radiation effects.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021415
State	Published - 23 Jan 2014
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

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10.1109/ICSICT.2014.7021415

Cite this

Zhang, D., Kang, W., Cheng, Y., Wang, G., Ravelosona, D., Zhang, Y., Klein, J. O., & Zhao, W. (2014). A novel SEU-tolerant MRAM latch circuit based on C-element. In J. Zhou, & T.-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021415 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021415

Zhang, Deming ; Kang, Wang ; Cheng, Yuanqing et al. / A novel SEU-tolerant MRAM latch circuit based on C-element. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

@inproceedings{fc25e644e2864e44b7c808e3a5c12db1,

title = "A novel SEU-tolerant MRAM latch circuit based on C-element",

abstract = "Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit, which is based on the special device C-element. By using a physics-based MTJ compact model and the 40nm design kit, hybrid simulations have been performed and simulation results show that the proposed MRAM latch circuit is immune to radiation effects.",

author = "Deming Zhang and Wang Kang and Yuanqing Cheng and Geifei Wang and Dafine Ravelosona and Youguang Zhang and Klein, \{Jacques Olivier\} and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021415",

language = "英语",

series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

address = "美国",

}

Zhang, D , Kang, W , Cheng, Y, Wang, G, Ravelosona, D, Zhang, Y, Klein, JO & Zhao, W 2014, A novel SEU-tolerant MRAM latch circuit based on C-element. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021415, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021415

A novel SEU-tolerant MRAM latch circuit based on C-element. / Zhang, Deming ; Kang, Wang ; Cheng, Yuanqing et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021415 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A novel SEU-tolerant MRAM latch circuit based on C-element

AU - Zhang, Deming

AU - Kang, Wang

AU - Cheng, Yuanqing

AU - Wang, Geifei

AU - Ravelosona, Dafine

AU - Zhang, Youguang

AU - Klein, Jacques Olivier

AU - Zhao, Weisheng

PY - 2014/1/23

Y1 - 2014/1/23

N2 - Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit, which is based on the special device C-element. By using a physics-based MTJ compact model and the 40nm design kit, hybrid simulations have been performed and simulation results show that the proposed MRAM latch circuit is immune to radiation effects.

AB - Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit, which is based on the special device C-element. By using a physics-based MTJ compact model and the 40nm design kit, hybrid simulations have been performed and simulation results show that the proposed MRAM latch circuit is immune to radiation effects.

UR - https://www.scopus.com/pages/publications/84946691517

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DO - 10.1109/ICSICT.2014.7021415

M3 - 会议稿件

AN - SCOPUS:84946691517

T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

Zhang D , Kang W , Cheng Y, Wang G, Ravelosona D, Zhang Y et al. A novel SEU-tolerant MRAM latch circuit based on C-element. In Zhou J, Tang TA, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021415. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021415

A novel SEU-tolerant MRAM latch circuit based on C-element

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