TY - GEN
T1 - A new self-reference sensing scheme for TLC MRAM
AU - Li, Zheng
AU - Yan, Bonan
AU - Yang, Lun
AU - Zhao, Weisheng
AU - Chen, Yiran
AU - Li, Hai
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/27
Y1 - 2015/7/27
N2 - Density is one of the major design factors of magnetic random access memory (MRAM). Very recently, a tri-level cell (TLC) structure was proposed to enhance the storage density of MRAM. In this work, we propose a new self-reference sensing scheme for the TLC MRAM cell based on its unique property called state ordering. Simulation results show that compared to conventional design, our proposed self-reference scheme achieves on average 61% saving on sensing delay while also demonstrating significantly enhanced resilience to device parametric variations.
AB - Density is one of the major design factors of magnetic random access memory (MRAM). Very recently, a tri-level cell (TLC) structure was proposed to enhance the storage density of MRAM. In this work, we propose a new self-reference sensing scheme for the TLC MRAM cell based on its unique property called state ordering. Simulation results show that compared to conventional design, our proposed self-reference scheme achieves on average 61% saving on sensing delay while also demonstrating significantly enhanced resilience to device parametric variations.
UR - https://www.scopus.com/pages/publications/84946235660
U2 - 10.1109/ISCAS.2015.7168703
DO - 10.1109/ISCAS.2015.7168703
M3 - 会议稿件
AN - SCOPUS:84946235660
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
SP - 593
EP - 596
BT - 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE International Symposium on Circuits and Systems, ISCAS 2015
Y2 - 24 May 2015 through 27 May 2015
ER -