A new damage model for ion implantation simulation with molecular dynamics method

Rong Wang; Min Yu; Kai Zhan; Xiaokang Shi; Huihui Ji; Jinyu Zhang; Hideki Oka

A new damage model for ion implantation simulation with molecular dynamics method

Rong Wang^*
, Min Yu
, Kai Zhan
, Xiaokang Shi
, Huihui Ji
, Jinyu Zhang
, Hideki Oka

^*Corresponding author for this work

Peking University
Fujitsu

Research output: Contribution to conference › Paper › peer-review

Abstract

A new damage model for ion implantation simulation based on molecular dynamic method is introduced in this paper. The model not only describes the formation of point defects but also describe the effect of amorphous pockets. The new model is successfully incorporated into the simulator LEACS [1]. Pre-nmorphization implantation (PAI) [2] with Sb is simulated. The simulation shows obviously better agreement with the RBS results than that achieved with point defects only. The simulation with new damage model can simulate the dose effect in implantation of impurities. Simulations As of and B into single-crystal silicon at 3 kev agree with experimental data.

Original language	English
Pages	1061-1063
Number of pages	3
State	Published - 2004
Externally published	Yes
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	18/10/04 → 21/10/04

Keywords

Amorphization
Amorphous pockets
Damage model
Ion implantation
Simulation

Cite this

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title = "A new damage model for ion implantation simulation with molecular dynamics method",

abstract = "A new damage model for ion implantation simulation based on molecular dynamic method is introduced in this paper. The model not only describes the formation of point defects but also describe the effect of amorphous pockets. The new model is successfully incorporated into the simulator LEACS [1]. Pre-nmorphization implantation (PAI) [2] with Sb is simulated. The simulation shows obviously better agreement with the RBS results than that achieved with point defects only. The simulation with new damage model can simulate the dose effect in implantation of impurities. Simulations As of and B into single-crystal silicon at 3 kev agree with experimental data.",

keywords = "Amorphization, Amorphous pockets, Damage model, Ion implantation, Simulation",

author = "Rong Wang and Min Yu and Kai Zhan and Xiaokang Shi and Huihui Ji and Jinyu Zhang and Hideki Oka",

year = "2004",

language = "英语",

pages = "1061--1063",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

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TY - CONF

T1 - A new damage model for ion implantation simulation with molecular dynamics method

AU - Wang, Rong

AU - Yu, Min

AU - Zhan, Kai

AU - Shi, Xiaokang

AU - Ji, Huihui

AU - Zhang, Jinyu

AU - Oka, Hideki

PY - 2004

Y1 - 2004

N2 - A new damage model for ion implantation simulation based on molecular dynamic method is introduced in this paper. The model not only describes the formation of point defects but also describe the effect of amorphous pockets. The new model is successfully incorporated into the simulator LEACS [1]. Pre-nmorphization implantation (PAI) [2] with Sb is simulated. The simulation shows obviously better agreement with the RBS results than that achieved with point defects only. The simulation with new damage model can simulate the dose effect in implantation of impurities. Simulations As of and B into single-crystal silicon at 3 kev agree with experimental data.

AB - A new damage model for ion implantation simulation based on molecular dynamic method is introduced in this paper. The model not only describes the formation of point defects but also describe the effect of amorphous pockets. The new model is successfully incorporated into the simulator LEACS [1]. Pre-nmorphization implantation (PAI) [2] with Sb is simulated. The simulation shows obviously better agreement with the RBS results than that achieved with point defects only. The simulation with new damage model can simulate the dose effect in implantation of impurities. Simulations As of and B into single-crystal silicon at 3 kev agree with experimental data.

KW - Amorphization

KW - Amorphous pockets

KW - Damage model

KW - Ion implantation

KW - Simulation

UR - https://www.scopus.com/pages/publications/21644470927

M3 - 论文

AN - SCOPUS:21644470927

SP - 1061

EP - 1063

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

A new damage model for ion implantation simulation with molecular dynamics method

Abstract

Conference

Keywords

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Cite this