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A narrowband low noise amplifier for passive imaging systems

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The design of a narrowband low noise amplifier (LNA) module at Ka band is presented. A low noise MMIC chip fabricated in GaAs pHEMT process is employed. Since the LNA is narrowband, its matching is sensitive to parasitic associated with the bond-wire interconnects and the fixture connectors. A T-type matching network which comprises of a high-low impedance lines is realized on microstrip substrate to nullify the bond-wires inductance. The planar structures in the design are simulated in ADS Momentum® while the bond-wires are modeled in a FEM based full-wave simulator. The design, assembly and packaging of the module are described. The measured results exhibit 23.5 dB gain at 35 GHz frequency. The 1/2 VSWR bandwidth is 2 GHz. The measured noise figure is 3.5 dB.

Original languageEnglish
Title of host publicationProceedings of 2013 10th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2013
Pages455-458
Number of pages4
DOIs
StatePublished - 2013
Event2013 10th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2013 - Islamabad, Pakistan
Duration: 15 Jan 201319 Jan 2013

Publication series

NameProceedings of 2013 10th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2013

Conference

Conference2013 10th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2013
Country/TerritoryPakistan
CityIslamabad
Period15/01/1319/01/13

Keywords

  • Low noise amplifier
  • Millimeter-wave (MMW)
  • bond-wire
  • noise figure

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