A Monte Carlo simulation model for surface evolution by plasma etching

Fangfang Chen; Kaigui Zhu; Aqing Chen; Weijie Huang; Lishuang Feng; Zhen Zhou; Guanglu Ge

doi:10.1016/j.apsusc.2013.04.171

A Monte Carlo simulation model for surface evolution by plasma etching

Fangfang Chen
, Kaigui Zhu^*
, Aqing Chen
, Weijie Huang
, Lishuang Feng
, Zhen Zhou
, Guanglu Ge

^*Corresponding author for this work

Beihang University
National Center for Nanoscience and Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A Monte Carlo simulation model, i.e. sputtering etch model, was established with Monte Carlo method to simulate plasma etching induced surface morphology evolution. The surface morphology images and fractal exponents were obtained, with α = 0.5, β = 0.27, z = 1.76. Germanium samples were etched in SF ₆ plasma and the post-etch surface was analyzed in order to compare with the model. The surface morphology images and fractal exponents by simulation describe the experimental results very well.

Original language	English
Pages (from-to)	655-659
Number of pages	5
Journal	Applied Surface Science
Volume	280
DOIs	https://doi.org/10.1016/j.apsusc.2013.04.171
State	Published - 1 Sep 2013

Keywords

Monte Carlo method
Plasma etching
Simulation
Surface morphology

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10.1016/j.apsusc.2013.04.171

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@article{b9b962f486494e77961a1ea704d24fbe,

title = "A Monte Carlo simulation model for surface evolution by plasma etching",

abstract = " A Monte Carlo simulation model, i.e. sputtering etch model, was established with Monte Carlo method to simulate plasma etching induced surface morphology evolution. The surface morphology images and fractal exponents were obtained, with α = 0.5, β = 0.27, z = 1.76. Germanium samples were etched in SF 6 plasma and the post-etch surface was analyzed in order to compare with the model. The surface morphology images and fractal exponents by simulation describe the experimental results very well.",

keywords = "Monte Carlo method, Plasma etching, Simulation, Surface morphology",

author = "Fangfang Chen and Kaigui Zhu and Aqing Chen and Weijie Huang and Lishuang Feng and Zhen Zhou and Guanglu Ge",

year = "2013",

month = sep,

day = "1",

doi = "10.1016/j.apsusc.2013.04.171",

language = "英语",

volume = "280",

pages = "655--659",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - A Monte Carlo simulation model for surface evolution by plasma etching

AU - Chen, Fangfang

AU - Zhu, Kaigui

AU - Chen, Aqing

AU - Huang, Weijie

AU - Feng, Lishuang

AU - Zhou, Zhen

AU - Ge, Guanglu

PY - 2013/9/1

Y1 - 2013/9/1

N2 - A Monte Carlo simulation model, i.e. sputtering etch model, was established with Monte Carlo method to simulate plasma etching induced surface morphology evolution. The surface morphology images and fractal exponents were obtained, with α = 0.5, β = 0.27, z = 1.76. Germanium samples were etched in SF 6 plasma and the post-etch surface was analyzed in order to compare with the model. The surface morphology images and fractal exponents by simulation describe the experimental results very well.

AB - A Monte Carlo simulation model, i.e. sputtering etch model, was established with Monte Carlo method to simulate plasma etching induced surface morphology evolution. The surface morphology images and fractal exponents were obtained, with α = 0.5, β = 0.27, z = 1.76. Germanium samples were etched in SF 6 plasma and the post-etch surface was analyzed in order to compare with the model. The surface morphology images and fractal exponents by simulation describe the experimental results very well.

KW - Monte Carlo method

KW - Plasma etching

KW - Simulation

KW - Surface morphology

UR - https://www.scopus.com/pages/publications/84879696461

U2 - 10.1016/j.apsusc.2013.04.171

DO - 10.1016/j.apsusc.2013.04.171

M3 - 文章

AN - SCOPUS:84879696461

SN - 0169-4332

VL - 280

SP - 655

EP - 659

JO - Applied Surface Science

JF - Applied Surface Science

ER -

A Monte Carlo simulation model for surface evolution by plasma etching

Abstract

Keywords

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