Skip to main navigation Skip to search Skip to main content

A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

  • Jing Li
  • , Jiehe Sui*
  • , Yanling Pei
  • , Celine Barreteau
  • , David Berardan
  • , Nita Dragoe
  • , Wei Cai
  • , Jiaqing He
  • , Li Dong Zhao
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Institut de Chimie Moléculaire et des Matériaux d'Orsay
  • Frontier Institute of Science and Technology

Research output: Contribution to journalArticlepeer-review

Abstract

A high ZT value of ∼1.1 at 923 K in the BiCuSeO system is achieved via heavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCuSeO system is promising for thermoelectric power generation applications.

Original languageEnglish
Pages (from-to)8543-8547
Number of pages5
JournalEnergy and Environmental Science
Volume5
Issue number9
DOIs
StatePublished - Sep 2012

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Fingerprint

Dive into the research topics of 'A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides'. Together they form a unique fingerprint.

Cite this