A General Intelligent Method for Degradation Sensitive Parameters Extraction and Life Prediction of Bipolar Transistor

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In recent years, key instrumentation and control devices in the nuclear power industry have entered the life depletion period. Due to diverse failure mechanisms and scatter orbits of degradation, the life of core component Bipolar Transistor is difficult to be determined. A migration learning based life prediction method is proposed to determine the sensitive degradation mechanism parameters. According to the degradation mechanism, the degradation principle of transistor is given, and degradation path of the RBE, RBC, DQG β parameters are proposed. A Bayesian classifier algorithm is developed to classify the triode to be tested into one of the pre-defined types according to the measured parameter values. Finally, the proposed three-parameter competitive degradation model is used to obtain the final triode lifetime distribution with reference to the parameter degradation curve corresponding to the type. The application case demonstrate that the method can intelligently generalize the degradation characteristic of different kind of transistor to get the accurate prediction of lifetime through empirical data, reduce the test costs significantly.

Original languageEnglish
Title of host publication2023 Global Reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023
EditorsWei Guo, Steven Li
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350301359
DOIs
StatePublished - 2023
Event14th IEEE Global Reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023 - Hangzhou, China
Duration: 12 Oct 202315 Oct 2023

Publication series

Name2023 Global Reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

Conference

Conference14th IEEE Global Reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023
Country/TerritoryChina
CityHangzhou
Period12/10/2315/10/23

Keywords

  • cluster analysis
  • life prediction
  • parameter extraction
  • test of transistor characteristics

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