1342 nm high-power picosecond pulse generation by a passively mode-locked Nd: YVO4 laser

Ying Yang; Jia Hou; Jing Liang He; Jin Long Xu; He Yang; Fei Lou; Zhao Wei Wang; Rui Hua Wang; Xun Min Liu

doi:10.1109/LPT.2013.2267211

1342 nm high-power picosecond pulse generation by a passively mode-locked Nd: YVO₄ laser

Ying Yang
, Jia Hou
, Jing Liang He
, Jin Long Xu
, He Yang
, Fei Lou
, Zhao Wei Wang
, Rui Hua Wang
, Xun Min Liu

Shandong University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A high-power diode-pumped passively mode-locked Nd: YVO₄ laser at 1342 nm with a semiconductor saturable absorber mirror is demonstrated in this letter. With the optimum cavity design, the maximum average output power of 2.19 W is obtained with an incident pump power of 12.35 W, corresponding to a slope efficiency of 19% and an optical conversion efficiency of 17.7%. The minimum pulse duration is measured to be 8.6 ps with the repetition rate of 63.4 MHz. The single pulse energy and peak power are calculated to be 34.5 nJ and 4 kW, respectively.

Original language	English
Article number	6527891
Pages (from-to)	1506-1509
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2013.2267211
State	Published - 2013
Externally published	Yes

Keywords

Diode-pumped
Nd:YVO crystal
Passively mode-locked laser

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10.1109/LPT.2013.2267211

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@article{3c7b2fe3595644bd8698a3ca50846137,

title = "1342 nm high-power picosecond pulse generation by a passively mode-locked Nd: YVO4 laser",

abstract = "A high-power diode-pumped passively mode-locked Nd: YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror is demonstrated in this letter. With the optimum cavity design, the maximum average output power of 2.19 W is obtained with an incident pump power of 12.35 W, corresponding to a slope efficiency of 19\% and an optical conversion efficiency of 17.7\%. The minimum pulse duration is measured to be 8.6 ps with the repetition rate of 63.4 MHz. The single pulse energy and peak power are calculated to be 34.5 nJ and 4 kW, respectively.",

keywords = "Diode-pumped, Nd:YVO crystal, Passively mode-locked laser",

author = "Ying Yang and Jia Hou and He, \{Jing Liang\} and Xu, \{Jin Long\} and He Yang and Fei Lou and Wang, \{Zhao Wei\} and Wang, \{Rui Hua\} and Liu, \{Xun Min\}",

year = "2013",

doi = "10.1109/LPT.2013.2267211",

language = "英语",

volume = "25",

pages = "1506--1509",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "15",

}

TY - JOUR

T1 - 1342 nm high-power picosecond pulse generation by a passively mode-locked Nd

T2 - YVO4 laser

AU - Yang, Ying

AU - Hou, Jia

AU - He, Jing Liang

AU - Xu, Jin Long

AU - Yang, He

AU - Lou, Fei

AU - Wang, Zhao Wei

AU - Wang, Rui Hua

AU - Liu, Xun Min

PY - 2013

Y1 - 2013

N2 - A high-power diode-pumped passively mode-locked Nd: YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror is demonstrated in this letter. With the optimum cavity design, the maximum average output power of 2.19 W is obtained with an incident pump power of 12.35 W, corresponding to a slope efficiency of 19% and an optical conversion efficiency of 17.7%. The minimum pulse duration is measured to be 8.6 ps with the repetition rate of 63.4 MHz. The single pulse energy and peak power are calculated to be 34.5 nJ and 4 kW, respectively.

AB - A high-power diode-pumped passively mode-locked Nd: YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror is demonstrated in this letter. With the optimum cavity design, the maximum average output power of 2.19 W is obtained with an incident pump power of 12.35 W, corresponding to a slope efficiency of 19% and an optical conversion efficiency of 17.7%. The minimum pulse duration is measured to be 8.6 ps with the repetition rate of 63.4 MHz. The single pulse energy and peak power are calculated to be 34.5 nJ and 4 kW, respectively.

KW - Diode-pumped

KW - Nd:YVO crystal

KW - Passively mode-locked laser

UR - https://www.scopus.com/pages/publications/84880905320

U2 - 10.1109/LPT.2013.2267211

DO - 10.1109/LPT.2013.2267211

M3 - 文章

AN - SCOPUS:84880905320

SN - 1041-1135

VL - 25

SP - 1506

EP - 1509

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

M1 - 6527891

ER -

1342 nm high-power picosecond pulse generation by a passively mode-locked Nd: YVO₄ laser

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Keywords

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