1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

Ying Wang; Hongmei Wang; Yunqi Liu; Chong An Di; Yanming Sun; Weiping Wu; Gui Yu; Deqing Zhang; Daoben Zhu

doi:10.1021/ja064580x

1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

Ying Wang
, Hongmei Wang
, Yunqi Liu^*
, Chong An Di
, Yanming Sun
, Weiping Wu
, Gui Yu
, Deqing Zhang
, Daoben Zhu

^*Corresponding author for this work

CAS - Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm² V^-1 s^-1 and an on/off ratio of nearly 5 × 10⁴. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade^-1).

Original language	English
Pages (from-to)	13058-13059
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	128
Issue number	40
DOIs	https://doi.org/10.1021/ja064580x
State	Published - 11 Oct 2006
Externally published	Yes

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title = "1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage",

abstract = "Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).",

author = "Ying Wang and Hongmei Wang and Yunqi Liu and Di, \{Chong An\} and Yanming Sun and Weiping Wu and Gui Yu and Deqing Zhang and Daoben Zhu",

year = "2006",

month = oct,

day = "11",

doi = "10.1021/ja064580x",

language = "英语",

volume = "128",

pages = "13058--13059",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "40",

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TY - JOUR

T1 - 1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

AU - Wang, Ying

AU - Wang, Hongmei

AU - Liu, Yunqi

AU - Di, Chong An

AU - Sun, Yanming

AU - Wu, Weiping

AU - Yu, Gui

AU - Zhang, Deqing

AU - Zhu, Daoben

PY - 2006/10/11

Y1 - 2006/10/11

N2 - Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).

AB - Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).

UR - https://www.scopus.com/pages/publications/33749530042

U2 - 10.1021/ja064580x

DO - 10.1021/ja064580x

M3 - 文章

AN - SCOPUS:33749530042

SN - 0002-7863

VL - 128

SP - 13058

EP - 13059

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 40

ER -

1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

Abstract

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