Abstract
Nano-Ag sintering is an ideal sintering materials for third-generation wide-band gap semiconductor chip packaging due to its excellent thermal conductivity and high temperature resistance. How to choose a suitable second phase to stabilize the evolution of the sintered layer structure during high-temperature operation is one of the important challenges of Ag sintering technology. In this paper, carbon nanotube-graphene (CNT-G) was used to reinforce the nano-Ag paste. The sintered microstructure, shear strength, and the influence of the added phase were analyzed. Results show that the decomposition temperature of CNT-G reinforced nano-Ag paste is 250 ℃, and the content of Ag and CNT-G is 93% (mass fraction). As sintering temperature increases, more and more particles form sintering necks, which gradually increases the density of the sintered body. The CNT-G reinforced nano-Ag paste can realize bonding SiC chip and DBC substrate at temperature of ≥230 ℃ and sintering pressure of 5 MPa.
| Translated title of the contribution | Low temperature sintering of power chip by carbon nanotube-graphene reinforced nano-Ag paste |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 3574-3582 |
| Number of pages | 9 |
| Journal | Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals |
| Volume | 31 |
| Issue number | 12 |
| DOIs | |
| State | Published - 28 Dec 2021 |
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