抗辐照ＭＲＡＭ 研究进展

The novel non-volatile MRAM ( magnetic random access memory) has the advantages of fast read and write speed, long data retention time and low power consumption, which attracts wide attention from researchers. Its excellent anti-irradiation capabilities are explored in depth, and further applications in aerospace and other fields are expected. The industrial development, technological changes and applications of MRAM were reviewed, the mature MRAM products of recent years were listed, and the advantages and disadvantages of different generations of MRAM were analyzed. The radiation effects of MTJ ( magnetic tunnel junction) and read/write circuit based CMOS ( complementary metal oxide semiconductor) were discussed. The recent achievements in an ti-radiative hardening design for MRAM were summarized. The development prospect of an ti-irradiation MRAM in aerospace field and even nuclear energy field was prospected.