Abstract
A strong-pulsed-field terahertz camera based on light emitting diode (LED) is reported in this paper. It is based on the operational principle that LED can generate nanosecond pulse-duration photovoltaic signal with a reproducible response to picosecond pulse-duration intense terahertz irradiation due to impact ionization when terahertz electric field strength is larger than 50 kV/cm. By employing this effect, we fabricate scanning and array LED-terahertz cameras. These devices have successfully captured images of focused terahertz beam profile generated in lithium niobate via the tilted pulse front technique. The proposed camera has characteristics of low cost, strong photovoltaic signal, rapid response, and large imaging area. Meanwhile, it would give a new idea in developing terahertz imaging technology based on strong-field nonlinear effect.
| Translated title of the contribution | A Light-Emitting Diode-Based Strong-Field Terahertz Camera |
|---|---|
| Original language | Chinese (Traditional) |
| Article number | 2411002 |
| Journal | Guangxue Xuebao/Acta Optica Sinica |
| Volume | 41 |
| Issue number | 24 |
| DOIs | |
| State | Published - 25 Dec 2021 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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