两种液相外延模式生长GaAs０．９Sb０．１薄膜的性能

Hao Xie; Shuhong Hu; Yang Wang; Tiantian Huang; Xiaohang Pan; Yan Sun; Ning Dai

doi:10.3788/LOP54.111602

两种液相外延模式生长GaAs０．９Sb０．１薄膜的性能

Translated title of the contribution: Properties of GaAs_0.9Sb_0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique

Hao Xie
, Shuhong Hu
, Yang Wang
, Tiantian Huang
, Xiaohang Pan
, Yan Sun
, Ning Dai

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs_0.9Sb_0.1 epilayer is grown by two growth models of liquid phase epitaxy technique, and the two models are step-cooling and super-cooling, respectively. The crystal structure, cross-sectional image, and luminescence property of GaAs_0.9Sb_0.1 epilayer are studied with utilization of X-ray diffractometer, scanning electron microscope, and Raman spectometer. The results show that the growth rate of GaAs_0.9Sb_0.1 epilayer grown with step-cooling is slower than that with super-cooling, and GaAs_0.9Sb_0.1 epilayer grown by step-cooling exhibits higher-quality crystalline structure and smoother interface. However, the GaAs_0.9Sb_0.1 epilayer grown by the two growth models display substantially similar photoluminescence property.

Translated title of the contribution	Properties of GaAs_0.9Sb_0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique
Original language	Chinese (Traditional)
Article number	111602
Journal	Laser and Optoelectronics Progress
Volume	54
Issue number	11
DOIs	https://doi.org/10.3788/LOP54.111602
State	Published - 2017
Externally published	Yes

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10.3788/LOP54.111602

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title = "两种液相外延模式生长GaAs０．９Sb０．１薄膜的性能",

abstract = "GaAs0.9Sb0.1 epilayer is grown by two growth models of liquid phase epitaxy technique, and the two models are step-cooling and super-cooling, respectively. The crystal structure, cross-sectional image, and luminescence property of GaAs0.9Sb0.1 epilayer are studied with utilization of X-ray diffractometer, scanning electron microscope, and Raman spectometer. The results show that the growth rate of GaAs0.9Sb0.1 epilayer grown with step-cooling is slower than that with super-cooling, and GaAs0.9Sb0.1 epilayer grown by step-cooling exhibits higher-quality crystalline structure and smoother interface. However, the GaAs0.9Sb0.1 epilayer grown by the two growth models display substantially similar photoluminescence property.",

keywords = "GaAsSb epilayer, liquid phase epitaxy, step-cooling, super-cooling, thin film",

author = "Hao Xie and Shuhong Hu and Yang Wang and Tiantian Huang and Xiaohang Pan and Yan Sun and Ning Dai",

year = "2017",

doi = "10.3788/LOP54.111602",

language = "繁体中文",

volume = "54",

journal = "Laser and Optoelectronics Progress",

issn = "1006-4125",

publisher = "Chinese Laser Press",

number = "11",

}

TY - JOUR

T1 - 两种液相外延模式生长GaAs０．９Sb０．１薄膜的性能

AU - Xie, Hao

AU - Hu, Shuhong

AU - Wang, Yang

AU - Huang, Tiantian

AU - Pan, Xiaohang

AU - Sun, Yan

AU - Dai, Ning

PY - 2017

Y1 - 2017

N2 - GaAs0.9Sb0.1 epilayer is grown by two growth models of liquid phase epitaxy technique, and the two models are step-cooling and super-cooling, respectively. The crystal structure, cross-sectional image, and luminescence property of GaAs0.9Sb0.1 epilayer are studied with utilization of X-ray diffractometer, scanning electron microscope, and Raman spectometer. The results show that the growth rate of GaAs0.9Sb0.1 epilayer grown with step-cooling is slower than that with super-cooling, and GaAs0.9Sb0.1 epilayer grown by step-cooling exhibits higher-quality crystalline structure and smoother interface. However, the GaAs0.9Sb0.1 epilayer grown by the two growth models display substantially similar photoluminescence property.

AB - GaAs0.9Sb0.1 epilayer is grown by two growth models of liquid phase epitaxy technique, and the two models are step-cooling and super-cooling, respectively. The crystal structure, cross-sectional image, and luminescence property of GaAs0.9Sb0.1 epilayer are studied with utilization of X-ray diffractometer, scanning electron microscope, and Raman spectometer. The results show that the growth rate of GaAs0.9Sb0.1 epilayer grown with step-cooling is slower than that with super-cooling, and GaAs0.9Sb0.1 epilayer grown by step-cooling exhibits higher-quality crystalline structure and smoother interface. However, the GaAs0.9Sb0.1 epilayer grown by the two growth models display substantially similar photoluminescence property.

KW - GaAsSb epilayer

KW - liquid phase epitaxy

KW - step-cooling

KW - super-cooling

KW - thin film

UR - https://www.scopus.com/pages/publications/85158163894

U2 - 10.3788/LOP54.111602

DO - 10.3788/LOP54.111602

M3 - 文章

AN - SCOPUS:85158163894

SN - 1006-4125

VL - 54

JO - Laser and Optoelectronics Progress

JF - Laser and Optoelectronics Progress

IS - 11

M1 - 111602

ER -

两种液相外延模式生长GaAs０．９Sb０．１薄膜的性能

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